http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H104086-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1997-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f732ecbf30b6c37725c2fa53b185cc4f |
| publicationDate | 1998-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H104086-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Summary] [Problem] To improve the controllability of the pattern dimension with high accuracy, the mask resistance, and the selectivity to the underlying film after a dry etching process, Eliminates resist and sidewall film residues, and suppresses after-corrosion and microloading effects. SOLUTION: Plasma CVD using a resist 4 as a mask The oxide film 3 is patterned, and the Al alloy laminated film 2 is dry-etched at a substrate temperature of room temperature or less using chlorine gas as a mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7005343-B2 |
| priorityDate | 1997-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.