| abstract |
(57) [Abstract] [Problem] A thermal conductivity of 100 W / mK or more and 20 × 10 Al with a thermal expansion coefficient of -6 / ° C or less, light weight and uniform composition Provided is a semiconductor substrate material made of a SiC composite alloy, a semiconductor substrate using the same, a semiconductor device, and a method of manufacturing the same. SOLUTION: The semiconductor substrate material is made of an Al-SiC composite alloy manufactured by a sintering method, and Al or Al alloy has 10 to 70% by weight of SiC dispersed in a particle form. The difference in the amount of SiC in the alloy composition is within 1% by weight. This semiconductor substrate material is used as a semiconductor substrate of a semiconductor device as it is or after being subjected to a surface treatment such as an Al coating layer on the surface. |