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filingDate 1998-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af58a4e48d9386bb9ec0c949a7ed1c7f
publicationDate 1998-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10326770-A
titleOfInvention Method of removing redeposition concealment from etched platinum
abstract (57) Abstract: A method for etching a platinum electrode layer deposited on a substrate is provided. A substrate for supporting a platinum electrode layer, an insulating layer on the platinum electrode layer, and a resist layer on the insulating layer is provided. Portions of the insulating layer are etched and penetrated using an etchant gas plasma. A portion of the insulating layer is removed from the platinum electrode layer, exposing a portion of the platinum electrode layer. The exposed portion of the platinum electrode layer is then etched by using a plasma of an etchant gas containing argon. The etched platinum electrode layer is subsequently over-etched by using a high-density plasma of etchant gas, and the redeposition concealment is removed from the etched platinum electrode layer. Etched platinum electrode layers are used in semiconductor devices.
priorityDate 1997-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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