| abstract |
(57) Abstract: it is measured without forming a structure for charge detecting such inherent unwanted capacitor a potential difference of the SiO 2 film on the SiO 2 film. A light including a wavelength in an infrared region is converted to a SiO 2 film. Of the light absorbed by the SiO 2 film 7, The potential difference of the SiO 2 film 7 is measured based on the amount of change in the amount of light absorption in the absorption wavelength region unique to the iO 2 film 7. |