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filingDate 1997-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1998-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10308360-A
titleOfInvention Method for manufacturing semiconductor device
abstract [PROBLEMS] To prevent an unnecessary metal film while leaving a metal silicide film in order to prevent cracking or peeling of a metal nitride film by a CVD method having a film thickness required for a contact hole or a through hole. Although it is necessary to remove it, there are problems such as many steps in the removal. A metal film is formed by a chemical vapor deposition method at a semiconductor substrate temperature of 500 ° C. or higher, and then unnecessary metal films other than the metal silicide film are selectively removed with an etching gas containing halogen. .
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