| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1998-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2f983af0d87dfbc659da810f243afed |
| publicationDate |
1998-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10275800-A |
| titleOfInvention |
Method of plasma etching |
| abstract |
A single-step etching process that can form a tapered via opening that does not require the use of oxygen in a single plasma etching chamber. SOLUTION: By varying the amount of polymer formed on the sidewalls, a high degree of freedom of the taper angle can be obtained with a taper opening of the shallow sidewall at the top of the via and a steeper sidewall at the bottom of the via. A via having a tapered opening is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2234260-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2234260-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100650766-B1 |
| priorityDate |
1997-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |