| abstract |
(57) Abstract: Provided are a light-emitting diode element made of a GaN-based compound semiconductor, which can provide high optical output and has no wavelength shift, and a semiconductor laser element having good laser oscillation characteristics. SOLUTION: A cladding layer made of a nitride semiconductor and / or Alternatively, a quantum well structure active layer of a nitride semiconductor containing at least indium and gallium sandwiched between the guide layers is formed. The quantum well structure active layer is formed by alternately stacked quantum well layers and barrier layers, wherein the number of the quantum well layers is 2 or more and 4 or less, and the thickness of the barrier layers is 4 nm or less. |