http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010206063-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
filingDate 2009-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88bf5e81d27df3c2170be89e24171998
publicationDate 2010-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010206063-A
titleOfInvention Driving method for GaN-based semiconductor light-emitting element, driving method for GaN-based semiconductor light-emitting element in image display device, driving method for planar light source device, and driving method for light-emitting device
abstract A driving method of a GaN-based semiconductor light-emitting element in which the emission wavelength hardly shifts to a short wavelength side is provided. A GaN-based semiconductor light emitting device comprising a first GaN-based compound semiconductor layer having a first conductivity type, an active layer having a well layer, and a second GaN-based compound semiconductor layer having a second conductivity type. In this driving method, after light emission is started by the start of carrier injection, the carrier injection is stopped before the light emission luminance value becomes constant, or light emission is started by the start of carrier injection. After that, before the change of the energy band inclination in the active layer due to the carrier injection, the carrier injection is stopped, or the light emission is started by the start of the carrier injection, and then the carrier injection is performed. The carrier injection is stopped before screening in the active layer due to the occurrence occurs. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016063121-A
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