http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10209181-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1997-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e535c84f89ef93f6c829af5543818541 |
| publicationDate | 1998-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10209181-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To obtain a clean semiconductor surface having good Schottky characteristics when dry-etching is performed using a gas containing Si and halogen, and to reproduce Vth of a desired FET with good reproducibility. Get to the value. SOLUTION: The semiconductor layer 3 is dry-etched selectively and anisotropically with respect to the etching stopper layer 2 using a gas containing Si and halogen. Thereafter, plasma irradiation is performed using H 2 gas or a gas containing F, S on the side wall of the recess 5 and the surface of the etching stopper layer 2 The i deposit 6 is removed. Next, after removing the deposits on the wafer surface with pure water or hydrochloric acid solution to expose a clean surface, a gate electrode 7 having a Schottky property is formed, and then a source electrode 8 and a drain having an ohmic property are formed. An electrode 9 is formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE48290-E http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013093439-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093540-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9455333-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793377-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150075868-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003309105-A |
| priorityDate | 1997-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.