| abstract |
PROBLEM TO BE SOLVED: To provide a method for grinding a back surface of a semiconductor wafer using an adhesive film having a property that the adhesive force does not change with time and the adhesive force is appropriately reduced when irradiated with ultraviolet light, and used in the method. To provide an adhesive film. SOLUTION: An adhesive film having an ultraviolet-curable adhesive layer formed on one surface of a base film is attached to the surface of a semiconductor wafer, the back surface of the semiconductor wafer is ground, and then irradiated, and then the adhesive film is peeled off. Back surface grinding method for a semiconductor wafer, wherein the base film contains a phthalocyanine dye, the light transmittance in the entire wavelength range of 320 to 380 nm is 60% or less, and the light transmittance in at least a part of the wavelength range. Is 20% or more, and the back surface grinding method of the semiconductor wafer having a thickness of 30 to 500 μm, and an adhesive film used in the method. |