| abstract |
(57) Abstract: An object is to realize a low-resistance p-type contact by eliminating a high-resistance layer due to interdiffusion at an interface with a substrate crystal. Another object of the present invention is to reduce leakage current when forming an internal constriction structure. SOLUTION: By using a compound semiconductor layer having a deviated composition as a contact layer and adding a predetermined element, a larger amount of doping can be performed than adding an impurity to a normal GaN-based material, and a higher concentration of conductive material can be obtained. Type is realized, Contact resistance can be reduced. Further, the current blocking efficiency is improved by using a compound semiconductor layer having a deviated composition as the current blocking layer. Also, light excitation M By irradiating light with energy slightly higher than the band gap of the grown crystal to eliminate roughness of the growth surface by the 0CVD method, p-type conductivity with a high carrier concentration can be realized. |