| abstract |
A process for manufacturing a gallium-rich gallium nitride film will be described. The process includes (a) preparing a reaction mixture containing gallium and nitrogen species that is selected such that gallium nitride is formed when the gallium and nitrogen species react with each other; and (b ) Silicon, glass, sapphire, quartz, and zinc oxide, allowing gallium species to react with nitrogen species in the presence of a gas environment at a temperature of about 480 ° C. to about 900 ° C. and an oxygen partial pressure of less than 10 −4 Torr. By allowing selective deposition of gallium nitride together with a buffer layer of zinc oxide on a substrate selected from the group consisting of crystalline materials having a lattice constant strictly lattice matched to gallium nitride, including A step of growing a gallium-rich gallium nitride film from the mixture, and a ratio of gallium atoms to nitrogen atoms in the gallium-rich gallium nitride film is 1.01 to 1.20. Similarly, according to the present invention, the resistivity of the gallium-rich gallium nitride film is reduced to a resistivity of, for example, less than 100 Ω · cm so that the film becomes conductive at a temperature of about 20 ° C. to about 650 ° C. An option of annealing for a time sufficient to reduce is also provided. |