| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
1996-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe580dfef39536c91a2fc5974df4c960
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e00e2b62ec684f05d2a32064bac3e0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5ddb26bfbc5abfb558072f52959bc17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39bb01b9550b2b059d860d615c338def |
| publicationDate |
1998-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10154712-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device suitable for a semiconductor device having a multi-layer wiring, to form an interlayer insulating film which prevents a short circuit or the like due to a deposition residue and has a sufficient flattening function. It is an object of the present invention to provide a method of manufacturing a semiconductor device which can be performed. SOLUTION: A step of forming a wiring layer on a semiconductor substrate, a step of dry-etching the wiring layer as a resist pattern mask to form a patterned wiring, and immersing the patterned wiring in a liquid containing an amine, A step of removing a deposition residue at the time of dry etching; a step of treating the wiring immersed in the amine-containing liquid in a fluid that does not further contain an amine and that can remove the deposition residue; Forming a conformal insulating layer, and forming an insulating layer having a planarization function on the conformal insulating layer by CVD. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211257-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013207067-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7645695-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100755670-B1 |
| priorityDate |
1996-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |