http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0964348-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1995-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1cf8904dc978d75b7dff79c730d3078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb9187837867c9c08b7a2db9ce85446 |
| publicationDate | 1997-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0964348-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | Kind Code: A1 Abstract: A method for manufacturing a semiconductor device is provided, which prevents a gate insulating film from being destroyed by avoiding accumulation of polarization charge generated in a resist during plasma etching. A gate electrode is formed on a gate insulating film of a MOS transistor, an interlayer insulating film deposited thereon is provided with an opening reaching the gate electrode, and a conductive film is formed on an upper surface including the opening. Manufacture of a semiconductor device in which wiring is formed by depositing and selectively dry-etching the conductive film using the resist formed on the conductive film as an etching mask to form a wiring made of the conductive film connected to the gate electrode. In the method, the resist is 1 × 10 10 Ω / □ It is a conductive resist having the following, for example, an aniline-based polymer. This resist can be formed by patterning a photoresist formed on a conductive polymer by selective exposure and development, and transferring the pattern of this photoresist to the conductive polymer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008152907-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2008152907-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6812145-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6613666-B2 |
| priorityDate | 1995-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.