http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0949071-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b61cee8b727523d0992c36ec764834c9 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00 |
| filingDate | 1995-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1432c40465a2836342a70bd359a42c1 |
| publicationDate | 1997-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0949071-A |
| titleOfInvention | Vacuum processing chamber cleaning method and mechanism, and semiconductor manufacturing method and apparatus using the same |
| abstract | (57) [Summary] [Object] To provide a method and mechanism for cleaning a vacuum processing chamber, which improves efficiency in cleaning and yield of objects to be processed, and a semiconductor manufacturing method and apparatus using the same. A vacuum processing chamber 2 that is sealed from the outside air and that processes a wafer 1, a processing gas supply unit 10 that supplies a processing gas to the vacuum processing chamber 2, and a foreign substance 3 formed in the vacuum processing chamber 2. A cleaning gas supply means 4 for supplying a cleaning gas that chemically reacts with the vacuum processing chamber 2 and an exhaust means 5 for exhausting the processing gas, the cleaning gas, or a vacuum. After exhausting the processing gas, the cleaning gas is supplied as it is without exposing the vacuum processing chamber 2 to the atmosphere, whereby the foreign matter 3 and the cleaning gas chemically react, and the foreign matter is generated by the plasma formed in the vacuum processing chamber 2. Then, the cleaning gas is exhausted to the outside of the vacuum processing chamber 2. |
| priorityDate | 1995-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.