http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09289321-A

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filingDate 1996-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7ea95cc3f2c6d573c31ce7572ad9bc5
publicationDate 1997-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H09289321-A
titleOfInvention Semiconductor device manufacturing method and manufacturing apparatus
abstract (57) Abstract: A semiconductor device used for a liquid crystal display element, a sensor array, a RAM and the like is manufactured at low cost and has high performance and reliability, and a manufacturing apparatus thereof is provided. The amorphous thin film is polycrystallized by laser annealing using holography in vacuum, and then a gate insulating layer and a gate metal are continuously deposited without breaking the vacuum. Alternatively, the deposition and patterning of the amorphous thin film is also performed in vacuum.
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priorityDate 1996-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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