| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_358a329cc314c43da9d13d9d90a7db83 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1996-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e7ddf78a4ea6060f49bd8b6cfac96af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78e9c0cffb81de675395a2f4e9f1d85c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bd243cfae1aa2dc57c7060f14db0186 |
| publicationDate |
1997-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H09289194-A |
| titleOfInvention |
Plasma etching electrode |
| abstract |
(57) Abstract: A parallel plate type plasma etching electrode in which dust generation is suppressed is obtained. A surface roughness of at least a portion of a parallel plate type plasma etching electrode that is consumed by plasma is Ra. 0.001-0.015 μm, Rmax 0.01-0. It is formed to 15 μm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10926523-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6423175-B1 |
| priorityDate |
1996-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |