http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09232288-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1996-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec2426937e35bc628d4ff85fea88f100 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14924caa84d7b35be081483693708821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46a0f1c26405ca27ff0ad563928670b9 |
| publicationDate | 1997-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09232288-A |
| titleOfInvention | Method of manufacturing semiconductor device and resist material |
| abstract | (57) Abstract: In dry etching in which a gas containing halogen is introduced into an etching chamber, the gas is turned into plasma, and a semiconductor substrate is etched using a resist pattern formed in advance as a mask, the resist is the dry etching. A resist that generates any of silicon halide, aluminum halide, carbon monoxide, and oxygen is used. [Effect] Since the compound that will become the side wall protective film is also generated from the resist, side etching does not occur even in a portion where the layer of the semiconductor substrate to be processed is changed. In addition, since a gas that improves the etching selectivity is generated from the resist, the etching selectivity is improved without adding such a gas. |
| priorityDate | 1996-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.