| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S156-915 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate |
1995-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5440ed6f5c6c58a1fd92e75aad76f5e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa7fafd512f4af6d4d15da3ee7369c39 |
| publicationDate |
1997-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0922797-A |
| titleOfInvention |
Plasma reactor with improved plasma uniformity due to gas addition, chamber diameter reduction and RF wafer pedestal diameter reduction |
| abstract |
(57) Abstract: A method for improving the uniformity of plasma ions and radicals over the surface of a semiconductor wafer or workpiece in an RF plasma reactor. SOLUTION: The density of ions or radicals of etchant species (chlorine etc.) is reduced near the end face (edge) of the wafer, Moreover, the uniformity of the etching rate is improved by not accompanied by the decrease on the center of the wafer. This means This is achieved by diluting the etchant (chlorine) with a diluent gas (for example, hydrogen bromide) that does not actually etch silicon near the edge 125a of the wafer 125. By uniformly dissociating chlorine on the center of the wafer to increase the local etching rate and not promoting the dissociation of chlorine around the periphery of the wafer end surface, the uniformity of the etching rate is improved. This introduces an inert gas near the center of the wafer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002217171-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009004755-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011109076-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007066472-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8821742-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100716690-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006066855-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015079959-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013191108-A1 |
| priorityDate |
1994-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |