http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09205272-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-34 |
| filingDate | 1996-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13e32abf2c76bec4ff304096d61b4f52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26df74029e5ace9c5d4daf585a5b774f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4022d9572d658ff42458b73133d27da8 |
| publicationDate | 1997-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09205272-A |
| titleOfInvention | Surface treatment method and apparatus |
| abstract | (57) Abstract: [PROBLEMS] To provide a surface treatment method and apparatus capable of modifying the surface of an object to be treated without plasma damage and having a large degree of freedom in the place of installation of the object to be treated. . SOLUTION: In order to improve the wettability of a soldering part 12 of a work 10, first, a raw material gas containing a halogen compound such as CF 4 is introduced into a plasma generating part 60 in a surface treatment unit 30. At this time, carrier gas (excluding He) may be pressure-fed. In the plasma generator 60, Under atmospheric pressure, the raw material gas is excited by an electrode to which a low frequency AC voltage or DC voltage of 0 to 50 kHz is applied and decomposed to generate highly reactive fluorine F 2 . A processing gas containing fluorine F 2 is brought into contact with the work to surface-treat the work. At this time, since the fluorine radical having a short life is not mainly processed, the position of the work can be freely set. When air is used as the carrier gas, it is mixed after the raw material gas is decomposed to suppress the generation of ozone. When the decomposition of the halogen compound is carried out in an atmosphere containing water, hydrogen halide is efficiently decomposed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009213946-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1731480-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1731480-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022219977-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004006511-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7919141-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013078573-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005095268-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0017923-A1 |
| priorityDate | 1995-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.