http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09205078-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1996-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ab67dff5ab20b95f020a82eef8efa6 |
| publicationDate | 1997-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09205078-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Abstract] [Problem] It is possible to secure a selective ratio with a mask material, (EN) A dry etching method in which a material to be etched does not redeposit, and etching progresses rapidly so that a resist mask can sufficiently withstand. A Ni-based metal thin film is plasma-etched in an atmosphere containing a compound having a carbonyl group or a carboxyl group in the molecule. Here, the Ni-based metal thin film is a Ni thin film, and is also a Ni—Fe alloy thin film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7229563-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101041049-B1 |
| priorityDate | 1996-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.