http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09199379-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3cfa11ef6f0c5577b4612b415ff30253 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 1996-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dec20a353a73b202aa2337b8aa2eec6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fe14ee5ac4e929f441c84e8aed3209c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_333ad4ff8744c96087487df526c5423d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be5fa9d0a1b6a380196751df0ba15426 |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09199379-A |
| titleOfInvention | High-quality epitaxial wafer and manufacturing method thereof |
| abstract | (57) Abstract: To provide an epitaxial wafer capable of producing a high-performance semiconductor device with few defects that seriously affect the semiconductor device with a high yield. An epitaxial wafer for a semiconductor device, having a carrier lifetime L (× 10 −3 seconds) according to a MOSC-t method, represented by the following formula L ≧ T / 3N (where N contaminates the epitaxial wafer surface). Ni content (× 10 12 atoms / cm 2 ), T is the time (hour) of heat treatment at 1000 ° C. after Ni contamination. High-quality epitaxial wafer that satisfies the above conditions. This high-quality epitaxial wafer is The oxygen concentration is 1.2 × 10 18 atoms / cm 3 or more, and the dopant concentration is 1.0 × 10 18 atoms. / Cm 3 or more, a silicon wafer is subjected to a high temperature treatment at 1000 ° C. or more for a predetermined time in a non-oxidizing gas atmosphere, and a silicon single crystal film having a thickness of 0.1 to 20 μm is epitaxially grown on the surface of the treated wafer to be manufactured. You can |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7063751-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7314766-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013153724-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6261860-B1 |
| priorityDate | 1996-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.