http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09162174-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1995-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc9de241693b08f570814cd140eb3854 |
| publicationDate | 1997-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09162174-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) Abstract: A method for manufacturing a semiconductor device is provided, which can accurately detect an etching end point when removing a polycrystalline silicon film of a solid phase diffusion source and can form a shallow junction. A field oxide film is selectively formed on a surface of a silicon substrate, and a gate electrode having a nitride film sidewall on a side surface is formed on a device formation region isolated by the field insulating film through a gate insulating film. , SiGe on the entire surface A step of forming the film 6 (FIG. 1A), a step of implanting BF 2 ions into the SiGe film 6 (FIG. 1B), and Si Ge film 6 A step of forming a sidewall 8 on the side surface of the gate electrode 4 by dry etching while monitoring a peculiar emission spectrum of the film in plasma in an atmosphere of a predetermined gas (FIG. 1C). B for element formation area F 2 ions are implanted, and heat treatment is performed to form a diffusion layer on the surface side of the silicon substrate 1 (FIG. 1D). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100582365-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0111668-A1 |
| priorityDate | 1995-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.