http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09162162-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1995-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39aca3f989967e2acc18b7195b85970f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39246c8c5fc540c776c37c36bcd68d81 |
| publicationDate | 1997-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09162162-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) 【Abstract】 PROBLEM TO BE SOLVED: To introduce oxygen gas into a silicon substrate on which a contact hole of an oxide film has been etched, and set the gas pressure to 10 By controlling to mTorr or more and applying high frequency power, formation of a high resistance layer on the substrate surface is suppressed and contact resistance is lowered. SOLUTION: In order to remove the polymer film deposited on the bottom of the contact, oxygen gas is introduced while controlling the pressure in the reaction chamber to 10 mTorr or more, and high-frequency power is applied to the coil to generate oxygen plasma, which is then applied to the silicon substrate. A bias voltage is applied to draw oxygen ions, and the polymer film in the contact hole is removed. When the gas pressure is low, the plasma density becomes high and oxygen ions are implanted inside the silicon substrate. Since the amount of 21 is large, a high resistance oxide layer 22b is formed inside the substrate. However, when the gas pressure is increased, the plasma density decreases, the oxide film layer 22b formed inside the substrate becomes thin, and the contact resistance decreases. 22a is a high resistance silicon oxide layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6831018-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11243084-A |
| priorityDate | 1995-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.