http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09129607-A

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filingDate 1995-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65d59aa48cdeac764baa5c454b69768
publicationDate 1997-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H09129607-A
titleOfInvention Microwave plasma etching apparatus and method
abstract Kind Code: A1 A microwave plasma etching apparatus and method capable of uniformly generating a high-density plasma in a large area even under a low pressure condition of about 1 mTorr without using a magnetic field and capable of performing ultrafine pattern etching on a large-area substrate at high speed. provide. A gas into the etching chamber, which is composed of a plasma etching chamber 101, a support means 102 for supporting a substrate 102 disposed in the etching chamber, and a flat plate having a large number of holes arranged so as to face the substrate support means. Introduction means 104 An exhaust means 105 in the etching chamber, a microwave introducing means using an endless annular waveguide 109 having a plurality of slots arranged around the etching chamber, and high-frequency power supply to the substrate support. And means.
priorityDate 1995-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 22.