| abstract |
(57) Abstract: A dry etching method and apparatus having high etching uniformity and excellent controllability of a pattern size and a pattern of a cross section of a pattern are provided. A dry etching method for etching a film deposited on a substrate, wherein a step of generating plasma in a gas containing a reaction gas by applying power to a first electrode, and an emission analysis of the plasma , Mass spectrometry of substances in plasma, measurement of plasma self-bias voltage, The method includes the steps of detecting a plasma state during etching by at least one method of measuring the impedance of plasma, and adjusting the state of the plasma according to a change in the detected plasma state. |