| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1995-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f1d890b9d2ab3727d4f42ef7731e82c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d83fdf7e4bb633668e872b5c78683864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b350e9372351829687b53625b4c546e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab74503e71436df693a9168b5259e72c |
| publicationDate |
1997-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H09115851-A |
| titleOfInvention |
Impurity introduction method and apparatus, and semiconductor device manufacturing method |
| abstract |
(57) Abstract: When an inert or reactive gas is introduced into a vacuum chamber to generate an impurity from an impurity solid, the impurity is efficiently generated and a high concentration of impurities is generated on the surface portion of the solid sample. The impurity layer can be formed. An impurity solid 21 containing boron as an impurity and a solid sample 1 into which boron is introduced into a vacuum chamber 10. Hold 2 and. Ar gas is introduced into the vacuum chamber 10 to generate plasma of the Ar gas. A voltage is applied to the impurity solid 21 so that the impurity solid 21 becomes a cathode with respect to the plasma, and the impurity solid 21 is sputtered by the ions in the plasma. Mixed in the plasma. A voltage is applied to the solid sample 12 so that the solid sample 12 serves as a cathode with respect to the plasma, so that boron mixed in the plasma is introduced to the surface portion of the solid sample 12. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8288259-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013118392-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012104578-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7199064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7858155-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6784080-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8404573-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8709926-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8450819-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7858537-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7863168-B2 |
| priorityDate |
1995-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |