patent/JP-H08321486-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08321486-A

Outgoing Links

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classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
filingDate	1995-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b7ab94d6c8953a66a9133f203ebac0
publicationDate	1996-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	JP-H08321486-A
titleOfInvention	Metal film pattern forming method
abstract	(57) [Abstract] [Purpose] To provide a method for forming a metal film pattern that facilitates lift-off. [Structure] The film thickness of the photoresist film 12 is twice or more the film thickness of the metal film 13, and the maximum temperature reached on the surface of the substrate 3 to be processed is 100 ° C to 150 ° C. [Effect] The photoresist film is appropriately modified, and the lift-off is facilitated without causing the image sticking to the base.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6214717-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10284497-A
priorityDate	1995-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244

Total number of triples: 48.