http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08288260-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
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filingDate 1995-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb18267de8d0ec051743e91ff5649ad
publicationDate 1996-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08288260-A
titleOfInvention Helicon wave plasma ashing method
abstract (57) [Summary] [Purpose] To ash a resist mask on which a surface-hardened layer is formed after ion implantation, without generating a pumping residue and suppressing damage. [Structure] Single loop antenna 6 for m = 0 mode plasma excitation, half-turn antenna 7 for m = 1 mode plasma excitation, wafer stage 9 that can be moved up and down in the direction of arrow B, and magnetic field control A helicon wave plasma CVD apparatus equipped with a switch 82 is used. First, the wafer stage 9 is raised to bring the wafer W closer to the helicon wave plasma P H , and the surface hardened layer is rapidly decomposed by using high density ions. Next, the wafer stage 9 is lowered, the switch 82 is turned off, the power supply to the half-turn antenna 7 is cut off, and radicals diffused from the inductively coupled plasma P I excited near the top plate 2 are removed. The remaining unaltered layer is removed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6412498-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015037166-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6043004-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160117213-A
priorityDate 1995-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.