http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0821575-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1986-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1996-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0821575-B2 |
| titleOfInvention | Improved RIE plasma etching method for forming ohmic contacts between metal and semiconductor |
| priorityDate | 1985-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.