| abstract |
(57) [Summary] [Purpose] To provide a method for rapidly and appropriately modifying a resist film. [Structure] The BLM film 2 is formed on the resist film 12 of the substrate 2 to be processed. In the process before forming 0, plasma generation power source 1 5 and the substrate bias power source 16 are independently used to irradiate the resist film 12 of the substrate 2 to be processed 7 with the plasma 7 so that the end face of the connection hole 11 is overhanged and its surface is A pretreatment method of a metal film forming process for modifying. [Effect] The plasma generation power and the substrate bias voltage can be appropriately set, plasma irradiation processing can be facilitated, the resist film surface can be modified reasonably quickly, and the shape of the end surface of the connection hole can be easily controlled. |