| abstract |
(57) [Abstract] [Purpose] To improve device reliability and simplify the manufacturing process. [Structure] After forming an Al wiring 52 on a silicon substrate 51, a PE-TEOS film 53 is formed by a CVD method. A photosensitive SOG film 54, which is a photosensitive resin composition, is spin-coated. The SOG film 54 is irradiated with light by a KrF excimer stepper and baked. Next, the hole pattern 55 is formed by developing and rinsing and post-paking. C The PE-TEOS film 58 is formed by the VD method. The PE-TEOS film 56 is etched back by anisotropic etching on the entire surface, a via hole 58 is opened, and the Al wiring 5 is formed. Expose 2 From CVD, as a barrier metal layer, T iN59 is formed. An Al electrode 60 having a film thickness of 0.6 μm is formed by the bias sputtering method. |