| abstract |
(57) [Abstract] [Purpose] To taper the cross-sectional shape of the connection hole with excellent accuracy and reproducibility in order to bury the fine connection hole with a high aspect ratio in the upper wiring. [Structure] The surface layer portion of the insulating film D is a hydrogen-enriched layer 3 having an increased hydrogen content. The hydrogen-enriched layer is a hydrogen-enriched SiO x layer or a hydrogen-enriched SiN layer formed by plasma CVD or ion implantation. When this insulating film D is dry-etched using a fluorocarbon-based gas, H released during etching of the hydrogen-enriched layer 3 captures F * in the plasma, promotes the deposition of the carbon-based polymer, and protects the side wall. Since the film 6 is strengthened, the opening 3t is tapered. However, since the opening 2a having an anisotropic shape is formed in the SiO x film 2 thereunder, a contact hole in which only the vicinity of the opening end is tapered is eventually obtained. |