| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1994-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b100bdb7f7498446220a8402211ca915
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c32e9d6fafa955d1349d44350ffa8367 |
| publicationDate |
1996-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08181282-A |
| titleOfInvention |
Semiconductor device manufacturing method |
| abstract |
(57) [Summary] [Object] The present invention forms a high-precision capacitor in a semiconductor device manufacturing method. In a MIM capacitor using a dielectric film as an insulating film between two metal layers laminated on a field insulating film, After smoothing the interlayer insulating film, the capacitor dielectric film is formed. Thereby, the dielectric film can be thinned. By reducing the thickness of the dielectric film, the capacitance value per unit area can be increased and the variation in the film thickness of the interlayer insulating film can be reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6426544-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100343049-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0809290-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0809290-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6788521-B2 |
| priorityDate |
1994-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |