| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48 |
| filingDate |
1994-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3ded18b93961a14ce4bf1188d068251 |
| publicationDate |
1996-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08181075-A |
| titleOfInvention |
Thin film deposition method |
| abstract |
(57) [Summary] [Object] To provide a thin film deposition method in which unnecessary carbon as an impurity is reduced in the thin film deposition using an organometallic compound. [Structure] Excitation on the Si substrate 2 placed in the high vacuum container 1 The ionized molecular beam 7 is irradiated, the organic aminotitanium compound gas 8 is simultaneously supplied, and the power source 6 applies a negative bias to the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100709919-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100226764-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100226763-B1 |
| priorityDate |
1994-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |