| abstract |
(57) 【Abstract】 PROBLEM TO BE SOLVED: To form an antireflection film satisfactorily even when a small amount of an organic medium, which is an environmental problem, is used, and as an antireflection film for preventing reflection of light from a substrate. Can be used Disclosed is an antireflection composition which suppresses mixing with a photoresist, has good step coverage even with a thin film thickness, and has good dry etching properties. Further, the present invention provides a pattern forming method in which the deterioration of the resolution and the deformation of the resist pattern are small and the change in the sensitivity due to the change in the coating film thickness is suppressed. A pattern is formed by applying an antireflection composition containing a polyvinyl alcohol resin having a saponification degree of 70% or more between a substrate and a photoresist film. |