http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08162528-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate | 1995-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8745cbb74cd1de50b52b075f832df7af |
| publicationDate | 1996-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08162528-A |
| titleOfInvention | Interlayer insulating film structure of semiconductor device |
| abstract | (57) [Summary] [Object] The present invention provides a structure capable of preventing the occurrence of corrosion due to the use of a low dielectric material for an interlayer insulating film and improving the plasma resistance, thereby reducing the high density wiring. Aim to realize low power consumption and high speed operation. Wirings 14 are formed on a substrate 11 having an insulating property at least on the surface, and a first insulating film is formed in a state of covering each wiring 14. 15 is formed, and a second insulating film 16 having a relative dielectric constant smaller than that of the first insulating film 15 is formed at least between the wirings 14. The thickness of the second insulating film 16 between the wirings 14 is 10 in the height direction and the depth direction than the height of the wirings 14. % To 100% thicker. Alternatively, a film (not shown) made of a low dielectric material is formed on the upper and lower sides of the wiring 14 via a first insulating film or a film equivalent thereto. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0936226-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006216978-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6333257-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100327145-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007281513-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6222269-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE38753-E http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6812128-B2 |
| priorityDate | 1994-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.