http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08162442-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38e4b503b1979a5d277324483132316a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1994-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5a2999d7474c06bd099d69e0bb6a9f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c91c7ec5da767dc65d15ae803c6cd62b |
| publicationDate | 1996-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08162442-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Summary] [Object] An object of the present invention is to provide a dry etching method in which the amount of side etching generated is small on a vertical side wall formed by etching. In a dry etching method using a helicon wave plasma etching device, the material to be etched is a thin film made of polysilicon, and the plasma-exciting gas is a chlorine-based gas containing at least oxygen gas and bromine-based gas. And Further, the brominated gas, It is characterized by being made of at least one material of HBr and BBr 3 . Furthermore, the chlorine-based gas is C It is characterized in that it is made of at least one of l 2 , SiCl 4 , and BCl 3 . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6146542-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6090719-A |
| priorityDate | 1994-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.