http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08153708-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1994-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d6f407612162dd239c15b3a6fd068d6 |
| publicationDate | 1996-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08153708-A |
| titleOfInvention | Etching apparatus and etching method |
| abstract | (57) [Summary] [Object] To provide a safer etching method and apparatus with a high etching selection ratio in selective etching of a laminated insulating film. [Configuration] A gas containing a carbonyl group vaporized from a liquid raw material such as methyl ethyl ketone at a flow rate of 1 or more is added to a CHF 3 gas from a gas cylinder 7 in an etching chamber 1 by a vaporizer 11 and a mass flow controller 10. It is supplied and the silicon oxide film formed on the substrate 13 is selectively etched. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11335573-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009099813-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957554-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190100385-A |
| priorityDate | 1994-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.