http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08139004-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1994-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb18267de8d0ec051743e91ff5649ad |
| publicationDate | 1996-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08139004-A |
| titleOfInvention | Plasma processing apparatus and plasma processing method |
| abstract | (57) [Summary] [Object] To provide a high throughput, clean and low damage ashing device and ashing method for a resist mask having a hardened and altered layer formed by high-dose ion implantation or the like. [Structure] A cured alteration layer is ashed by a plasma processing apparatus having a helicon wave plasma generation source having a transparent bell jar 6 made of a dielectric material transparent to UV light, and then the substrate 1 to be processed is irradiated with UV light irradiating means 7 And ash the unaltered layer of the resist mask by irradiating UV light in ozone. [Effect] With one high-density plasma processing apparatus, high-density ion mode ashing processing and vapor-phase processing without ions are possible, and high-throughput residue-free ashing is possible. The resist mask ashing after the Al-based metal layer patterning and the passivation film forming treatment can be continuously performed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008116615-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8187389-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010056332-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I736829-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011131149-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009200317-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10223606-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8574369-B2 |
| priorityDate | 1994-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.