http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08127885-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1994-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98e6a59c7bd6f23275acd05094dddfff |
| publicationDate | 1996-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08127885-A |
| titleOfInvention | Method for cleaning film forming apparatus and film forming apparatus |
| abstract | (57) [Abstract] [Purpose] Deposition apparatus for semiconductor device manufacturing, eg ECR Particles are reduced by effectively removing the low-density film that is deposited on the side wall of the reaction chamber of the CVD apparatus during film formation and causes particles due to peeling after film formation. [Constitution] A cleaning gas containing no fluorine atom in its molecular structure, for example, a rare gas such as N 2 , O 2 , N 2 O or Ar is introduced into the reaction chamber 6, and plasma discharge is performed in the reaction chamber 6. The low density film deposited in the reaction chamber 6 is removed by the sputter etching using the cleaning gas. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6467490-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006351948-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-1319228-C |
| priorityDate | 1994-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.