http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08115900-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1994-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b7ab94d6c8953a66a9133f203ebac0 |
| publicationDate | 1996-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08115900-A |
| titleOfInvention | Patterning method for silicon-based material layer |
| abstract | (57) [Summary] [Object] To provide a process with a large selection ratio to a resist mask, excellent anisotropy, and less particle contamination when patterning a silicon-based material layer such as trench etching on a single crystal silicon substrate. . [Structure] Plasma etching is performed using a mixed gas of an inorganic oxide gas such as CO x , NO x, or CO x, and a halogen-based gas. The side wall protective film 5 formed at this time is mainly composed of decomposition products of the resist mask 4, has a small halogen content, and incorporates polar groups such as C—O bonds, and has a high resistance to ion bombardment and radical attack. Have. A sulfur-based compound may be used in combination with the sidewall protective film by adding a halogenated sulfur-based gas. [Effect] By strengthening the film quality of the sidewall protection film, the amount of deposition can be reduced, and anisotropic etching can be performed even if the incident ion energy is lowered. Therefore, it is possible to prevent particle contamination and reduction of the resist mask film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100414506-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007250940-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013243379-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7629255-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005508078-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008151120-A1 |
| priorityDate | 1994-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.