http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0794478-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
filingDate | 1993-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_697322b9f60bc33900fdb091e0c25064 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cea2d4315eb02a6788e6f9cc1dc0562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_718c47a467ef7a1ee0c5ec5b71d370c4 |
publicationDate | 1995-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H0794478-A |
titleOfInvention | Substrate processing apparatus using plasma |
abstract | (57) [Summary] (Modified) [Configuration] A vacuum container 1 in which a substrate 3 to be processed is housed, and a pair of antenna electrodes 10a and 10b which emit electromagnetic waves into the vacuum container 1 when a high-frequency voltage is applied. A gas introduction part 6 for introducing a gas that causes plasma into the vacuum container 1 by the electromagnetic wave, magnetic field generating means 13a, 13b for generating a magnetic field in the vacuum container 1, and the surface of the substrate 3 to be processed is the electromagnetic wave, A substrate mounting portion 2a for mounting the substrate 3 to be processed along the wavelength direction of the helicon wave formed by the interaction of the magnetic field and the plasma, and the gas exhaust portion 7 for exhausting the gas in the vacuum container 1. A substrate processing apparatus using plasma, which comprises: [Effect] High-density plasma can be efficiently generated, and the yield in manufacturing semiconductor devices can be improved. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015135883-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016147296-A1 |
priorityDate | 1993-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
---|---|
isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 |
Total number of triples: 20.