http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0786240-A

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filingDate 1993-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da232fe8f438fa2738b5de869992199d
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publicationDate 1995-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0786240-A
titleOfInvention Surface treatment equipment
abstract (57) [Summary] [Structure] When H 2 gas is introduced into the reaction tube 1 evacuated to an ultrahigh vacuum and the W filament 4 is electrically heated to 1800 ° C., H 2 molecules are dissociated and atomic hydrogen H Occurs. H Atoms and HF gas are applied to the Si wafer 8 having a natural oxide film installed on the sample table 6. The Si oxide film is etched by HF gas. When the etching of the Si oxide film is finished, the Si surface is terminated with H and F. [Effect] Since the natural oxide film can be efficiently removed by the dry method and the surface of the Si wafer can be terminated with hydrogen, a surface that is resistant to oxidation and contamination and has a small residual F content can be obtained.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014053643-A
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Total number of triples: 32.