| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
1991-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2bab61626295337255f7255a7e11fc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a377c0184fe4e31e99feea770af9779d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d624e2e497e387b78e3c62b5dd0db337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_477f83b04eedf8d1f80ae86cb4e39d34 |
| publicationDate |
1995-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0774146-A |
| titleOfInvention |
Improved planarization method for integrated circuit structures using low melting inorganic materials |
| abstract |
(57) [Summary] A planarization method for planarizing an integrated circuit structure in a CVD apparatus using a low melting inorganic planarization material, which is a borate glass on an insulating material layer such as silicon oxide. A low-melting-point glass having a hygroscopic property may be formed by depositing a low-melting inorganic flattening layer such as the above, flattening the structure by dry etching the low-melting inorganic flattening layer, and depositing another layer of an insulating material Surround the rest of the planarization layer. This method eliminates the need for separate coating, drying, and curing steps associated with the application of a planarizing layer of organic material that is normally performed outside of vacuum equipment. In the preferred embodiment, all deposition and etching steps are performed without removing the integrated circuit structure from the device. In a particularly preferred embodiment, all of the steps are carried out in the same chamber of the device. An additional etching step may be performed after depositing the first insulating layer and prior to depositing the planarization layer to prevent voids from forming in the insulating layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4726273-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000077404-A |
| priorityDate |
1990-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |