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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate 1993-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88d1cc4e93cb460978aa6c1258be9b22
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publicationDate 1995-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0745587-A
titleOfInvention Method for manufacturing semiconductor device
abstract (57) [Abstract] [Purpose] In the dry etching process of an insulating film on an aluminum wiring, aluminum fluoride and Teflon-based deposits are prevented from being generated, and contact defects are reduced. [Structure] After a silicon oxide film 4 deposited on an aluminum wiring 3 of a silicon substrate 1 is dry-etched with a fluorine-based gas, plasma using oxygen is irradiated to remove the Teflon-based deposit 6. Next, while heating the silicon substrate 1, over etching is performed with a bromine-based gas or a chlorine-based gas to prevent aluminum fluoride from being produced as a deposit. Finally, a plasma using nitrogen is irradiated to remove residual bromine atoms and chlorine atoms that cause aluminum corrosion.
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priorityDate 1993-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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