http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07335624-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1994-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b7ab94d6c8953a66a9133f203ebac0 |
| publicationDate | 1995-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07335624-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Summary] (Modified) [Purpose] In the etching of refractory metal poly-side gates, side etching is prevented, and the selectivity with respect to the resist mask and gate insulating film is improved. I will provide a. [Structure] The refractory metal polycide layer 5 is etched using an iodine-based gas. Further, a mixed gas with a fluorine-based gas is used and the mixing ratio is changed to perform two-stage etching. The sidewall protection film 7 formed at this time contains iodine-based reaction products such as CI x and SiI x , and has high dry etching resistance. [Effect] Ion energy required for anisotropic processing can be reduced, the selection ratio is improved, and the underlying gate insulating film sputtering and pattern shift do not occur. If sulfur deposition is used together with the sidewall protective film, further damage and pollution can be reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007211322-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7919005-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1187324-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001237236-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006126520-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09306895-A |
| priorityDate | 1994-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.