http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07335569-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1994-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f008c2c0b6876eb4d34558741f8379c6 |
| publicationDate | 1995-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07335569-A |
| titleOfInvention | Plasma processing apparatus and plasma processing method |
| abstract | (57) [Abstract] [Purpose] Reflux is less likely to occur inside the chamber, high-precision plasma etching can be performed, and exhaust efficiency is improved without increasing the number of exhaust pumps. Providing equipment. A susceptor 26 on which a semiconductor wafer 24 to be plasma-etched is installed, and a susceptor 26. A chamber 20 in which a chamber is installed, and a chamber 20 Source gas introduction nozzle 36 for introducing source gas into the interior A plasma generating coil 28 for converting the source gas introduced into the chamber 20 into a plasma state, and a susceptor 2 6, a main exhaust port 38 for exhausting the gas that has flowed toward the surface of the semiconductor wafer 24 and an outer periphery of the chamber 20 located above the susceptor 26. A plasma etching apparatus having an auxiliary exhaust port 40 for exhausting the gas that has flowed toward the exhaust gas. |
| priorityDate | 1994-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.