http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07297177-A

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filingDate 1995-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bcd316783284e03bc8c0e571509038d
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publicationDate 1995-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07297177-A
titleOfInvention Plasma processing method
abstract (57) [Abstract] [Purpose] Even a sample having an insulating material is etched with a fine pattern and a high aspect ratio without accumulating charges in the sample. The etching processing gas having a component that reacts with the material to be etched and a component that forms a deposited film and has a critical potential is turned into plasma under reduced pressure, and a high frequency voltage having a frequency of 2 MHz or less is applied to an electrode on which the material to be etched is arranged. The applied voltage is changed to change the output voltage of the high frequency voltage across the critical potential, and etching and film formation are alternately repeated on the material to be etched.
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Total number of triples: 24.