http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07283207-A

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filingDate 1995-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1995-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07283207-A
titleOfInvention Plasma processing method
abstract (57) [Abstract] [Purpose] The material to be etched is substantially anisotropically etched. [Structure] An etching gas having a component that reacts with a material to be etched and a component that forms a deposited film and has a critical potential is turned into plasma under reduced pressure, and an acceleration voltage that accelerates ions in the plasma toward the material to be etched is applied. It has a step of alternately changing the critical potential and alternately repeating etching and film formation with respect to the material to be etched, and the action time of the etching is the time when the undercut occurring in the material to be etched falls within the allowable value, The working time of the film formation is a time for forming a film thickness such that the film formed on the etching side surface during the next etching process can remain as a protective film.
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Total number of triples: 24.